Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study

Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study Научная публикация

Журнал

Vacuum
ISSN: 0042-207X , E-ISSN: 1879-2715

Вых. Данные

Год: 2026, Том: 247, Номер статьи : 115106, Страниц : 14 DOI: 10.1016/j.vacuum.2026.115106

Авторы

Ermakova E. ¹ , Plehanov A. ¹ , Saraev A. ² , Gerasimov E. ² , Shayapov V. ¹ , Maksimovskiy E. ¹ , Sulyaeva V. ¹ , Kolodin A. ³ , Kosinova M. ¹

Организации

1	Department of chemistry of functional materials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia
2	Department of Catalyst Study, Boreskov Institute of Catalysis SB RAS, Novosibirsk 630090, Russia
3	Department of chemistry of coordination, cluster and supramolecular compounds, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia

Ermakova E. , Plehanov A. , Saraev A. , Gerasimov E. , Shayapov V. , Maksimovskiy E. , Sulyaeva V. , Kolodin A. , Kosinova M.
Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study
Vacuum. 2026. V.247. 115106 :1-14. DOI: 10.1016/j.vacuum.2026.115106 Scopus

Поступила в редакцию:	17 окт. 2025 г.
Принята к публикации:	18 янв. 2026 г.
Опубликована online:	22 янв. 2026 г.
Опубликована в печати:	1 апр. 2026 г.

Scopus:

2-s2.0-105028520238

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