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Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study Full article

Journal Vacuum
ISSN: 0042-207X , E-ISSN: 1879-2715
Output data Year: 2026, Volume: 247, Article number : 115106, Pages count : 14 DOI: 10.1016/j.vacuum.2026.115106
Authors Ermakova E. 1 , Plehanov A. 1 , Saraev A. 2 , Gerasimov E. 2 , Shayapov V. 1 , Maksimovskiy E. 1 , Sulyaeva V. 1 , Kolodin A. 3 , Kosinova M. 1
Affiliations
1 Department of chemistry of functional materials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia
2 Department of Catalyst Study, Boreskov Institute of Catalysis SB RAS, Novosibirsk 630090, Russia
3 Department of chemistry of coordination, cluster and supramolecular compounds, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia
Cite: Ermakova E. , Plehanov A. , Saraev A. , Gerasimov E. , Shayapov V. , Maksimovskiy E. , Sulyaeva V. , Kolodin A. , Kosinova M.
Amorphous SiCxNy:H thin films produced with various nitrogen sources: A comparative study
Vacuum. 2026. V.247. 115106 :1-14. DOI: 10.1016/j.vacuum.2026.115106 Scopus
Dates:
Submitted: Oct 17, 2025
Accepted: Jan 18, 2026
Published online: Jan 22, 2026
Published print: Apr 1, 2026
Identifiers:
Scopus: 2-s2.0-105028520238
Citing: Пока нет цитирований
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