Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma Научная публикация

Журнал

High Energy Chemistry
ISSN: 0018-1439 , E-ISSN: 1608-3148

Вых. Данные

Год: 2024, Том: 58, Номер: 6, Страницы: 693-698 Страниц : 6 DOI: 10.1134/S0018143924700565

Ключевые слова

hexamethyldisilane, ICP CVD, hydrogenated silicon carbide and silicon carbonitride films, optical emission spectroscopy

Авторы

Chagin M.N. ¹ , Ermakova E.N. ¹ , Shayapov V.R. ¹ , Sulyaeva V.S. ¹ , Maksimovskii E.A. ¹ , Yushina I.V. ¹ , Kosinova M.L. ¹

Организации

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

Amorphous films of hydrogenated silicon carbide SiCx:H and carbonitride SiCxNy:H have been synthesized in an RF inductively coupled plasma reactor using hexamethyldisilane vapor and additional argon and/or nitrogen gases. The deposition process was carried out at temperatures of 50–400°C and plasma powers of 100–400 W. The dependences of the growth rate, chemical composition and structure of films, light transmittance, refractive index, and optical band gap on synthesis conditions have been obtained. An in situ study of the gas phase composition was performed using optical emission spectroscopy.

Chagin M.N. , Ermakova E.N. , Shayapov V.R. , Sulyaeva V.S. , Maksimovskii E.A. , Yushina I.V. , Kosinova M.L.
Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma
High Energy Chemistry. 2024. V.58. N6. P.693-698. DOI: 10.1134/S0018143924700565 WOS Scopus РИНЦ OpenAlex

Чагин М.Н. , Ермакова Е.Н. , Шаяпов В.Р. , Суляева В.С. , Максимовский Е.А. , Юшина И.В. , Косинова М.Л.
Аморфные пленки SiCx:H и SiCxNy:H, полученные из паров гексаметилдисилана в индуктивно-связанной плазме ВЧ-разряда
Химия высоких энергий. 2024. Т.58. №6. С.500-507. DOI: 10.31857/S0023119324060112 РИНЦ

Опубликована в печати:

2 дек. 2024 г.

Web of science:	WOS:001348622000008
Scopus:	2-s2.0-85208485468
РИНЦ:	74496527
OpenAlex:	W4403974054

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