Synthesis of SiCNO:H Dielectric Layers by Plasma-Enhanced Chemical Vapor Deposition Using a Novel Organosilicon Precursor

Synthesis of SiCNO:H Dielectric Layers by Plasma-Enhanced Chemical Vapor Deposition Using a Novel Organosilicon Precursor Full article

Journal

High Energy Chemistry
ISSN: 0018-1439 , E-ISSN: 1608-3148

Output data

Year: 2026, Volume: 60, Number: 1, Pages: 129-133 Pages count : 5 DOI: 10.1134/s0018143925601149

Authors

Ermakova E.N. ¹ , Kosinova M.L. ¹

Affiliations

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

Funding (1)

Russian Science Foundation

Ermakova E.N. , Kosinova M.L.
Synthesis of SiCNO:H Dielectric Layers by Plasma-Enhanced Chemical Vapor Deposition Using a Novel Organosilicon Precursor
High Energy Chemistry. 2026. V.60. N1. P.129-133. DOI: 10.1134/s0018143925601149 Scopus OpenAlex

Submitted:	Aug 26, 2025
Published print:	Mar 2, 2026

≡ Scopus:	2-s2.0-105031709705
≡ OpenAlex:	W7133200908