Реферат: Thin film structures based on samarium and hafnium oxides films were prepared on silicon wafers by atomic layer deposition (ALD) from tetrakis(diethylamido)hafnium (IV) (Hf(N(C 2 H 5 ) 2 ) 4 , TDEAH), tris(isopropylcyclopentadienyl) samarium (III) (Sm(C 5 H 4 C 3 H 7 ) 3 , Sm( i PrCp) 3 ) and water as precursors. The films were examined with single-wave null ellipsometry, x-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and capacitance-voltage (CV) measurements. For Hf02 and Hf-rich films, the growth per cycle of 0.07-0.08 nm/cycle was obtained. The ALD process of Sm 2 O 3 and Sm-rich films when using H 2 O vapor as a co-reactant was shown to be significantly complicated due to a strong CVD-component. For the Hf-Sm-O films, only a phase of a disordered fluorite-like structure (space group Fm-3m) with a monotonic increase of the lattice parameter with the increase of Sm content was found. The films with dielectric constant value 20–25 were obtained at Sm concentration up to 17 at. %. The TEM studies revealed that the film consists of ~60 nm crystallites oriented to the normal of the surface.

Библиографическая ссылка: Petukhova D.E. , Kichay V.N. , Lebedev M.S.
The Structural and Electrical Properties of High-K Hf-Sm-O Thin Films Prepared by Atomic Layer Deposition
В сборнике 2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM). 2023. – ISBN 9798350336870. DOI: 10.1109/EDM58354.2023.10225098 OpenAlex

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Опубликована online:

29 авг. 2023 г.

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W4386259861

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