Trisylilamine derivative for plasma-assisted fabrication of SiCN:H copper diffusion barrier with reduced value of permittivity

Trisylilamine derivative for plasma-assisted fabrication of SiCN:H copper diffusion barrier with reduced value of permittivity Full article

Journal

Thin Solid Films
ISSN: 1879-2731 , E-ISSN: 0040-6090

Output data

Year: 2026, Volume: 836, Article number : 140871, Pages count : 12 DOI: 10.1016/j.tsf.2026.140871

Authors

Ermakova Evgeniya ¹ , Shayapov Vladimir ¹ , Saraev Andrey ² , Maximovsky Eugene ¹ , Kirienko Viktor ³ , Sulyaeva Veronica ¹ , Gerasimov Evgeny ² , Kosinova Marina ¹

Affiliations

1	Department of functional materials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, 630090, Russia
2	Department of Catalyst Study, Boreskov Institute of Catalysis SB RAS, Novosibirsk, 630090, Russia
3	Laboratory of Nonequilibrium Semiconductor Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia

Ermakova E. , Shayapov V. , Saraev A. , Maximovsky E. , Kirienko V. , Sulyaeva V. , Gerasimov E. , Kosinova M.
Trisylilamine derivative for plasma-assisted fabrication of SiCN:H copper diffusion barrier with reduced value of permittivity
Thin Solid Films. 2026. V.836. 140871 :1-12. DOI: 10.1016/j.tsf.2026.140871

Submitted:	Sep 2, 2025
Accepted:	Jan 20, 2026
Published online:	Jan 21, 2026
Published print:	Feb 15, 2026

No identifiers

Пока нет цитирований