Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method Full article
Journal |
Journal of Electronic Materials
ISSN: 0361-5235 , E-ISSN: 1543-186X |
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Output data | Year: 2025, Volume: 54, Pages: 10.1007/s11664-025-11865-z Pages count : DOI: 10.1007/s11664-025-11865-z | ||||||||||||||
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Cite:
Atuchin V.V.
, Lebedev M.S.
, Gromilov S.A.
, Korolkov I.V.
, Perevalov T.V.
, Prosvirin I.P.
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. V.54. P.10.1007/s11664-025-11865-z. DOI: 10.1007/s11664-025-11865-z РИНЦ OpenAlex
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. V.54. P.10.1007/s11664-025-11865-z. DOI: 10.1007/s11664-025-11865-z РИНЦ OpenAlex
Dates:
Published print: | Mar 12, 2025 |
Identifiers:
Elibrary: | 80479392 |
OpenAlex: | W4408362915 |
Citing:
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