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Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method Full article

Journal Journal of Electronic Materials
ISSN: 0361-5235 , E-ISSN: 1543-186X
Output data Year: 2025, Volume: 54, Pages: 10.1007/s11664-025-11865-z Pages count : DOI: 10.1007/s11664-025-11865-z
Authors Atuchin V.V. 1,2 , Lebedev M.S. 3,4 , Gromilov S.A. 5 , Korolkov I.V. 5 , Perevalov T.V. 6 , Prosvirin I.P. 7
Affiliations
1 Research and Development Department, Kemerovo State University, Kemerovo, Russia 650000
2 Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
3 Laboratory of Metalorganic Compounds for Dielectric Material Deposition, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
4 Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
5 Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
6 Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
7 Surface Science Laboratory, Boreskov Institute of Catalysis, Novosibirsk, Russia 630090
Cite: Atuchin V.V. , Lebedev M.S. , Gromilov S.A. , Korolkov I.V. , Perevalov T.V. , Prosvirin I.P.
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. V.54. P.10.1007/s11664-025-11865-z. DOI: 10.1007/s11664-025-11865-z РИНЦ OpenAlex
Dates:
Published print: Mar 12, 2025
Identifiers:
Elibrary: 80479392
OpenAlex: W4408362915
Citing: Пока нет цитирований
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