Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method

Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method Научная публикация

Журнал

Journal of Electronic Materials
ISSN: 0361-5235 , E-ISSN: 1543-186X

Вых. Данные

Год: 2025, Том: 54, Страницы: 10.1007/s11664-025-11865-z Страниц : DOI: 10.1007/s11664-025-11865-z

Авторы

Atuchin V.V. ^1,2 , Lebedev M.S. ^3,4 , Gromilov S.A. ⁵ , Korolkov I.V. ⁵ , Perevalov T.V. ⁶ , Prosvirin I.P. ⁷

Организации

1	Research and Development Department, Kemerovo State University, Kemerovo, Russia 650000
2	Laboratory of Optical Materials and Structures, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
3	Laboratory of Metalorganic Compounds for Dielectric Material Deposition, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
4	Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
5	Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russia 630090
6	Laboratory of Silicon Material Science, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia 630090
7	Surface Science Laboratory, Boreskov Institute of Catalysis, Novosibirsk, Russia 630090

Atuchin V.V. , Lebedev M.S. , Gromilov S.A. , Korolkov I.V. , Perevalov T.V. , Prosvirin I.P.
Growth and Characterization of Mixed Oxide Hf1−xScxOy (0 ≤ x ≤ 1) Films Prepared by the Atomic Layer Deposition Method
Journal of Electronic Materials. 2025. V.54. P.10.1007/s11664-025-11865-z. DOI: 10.1007/s11664-025-11865-z РИНЦ

Опубликована в печати:

12 мар. 2025 г.

РИНЦ:

80479392

Пока нет цитирований