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Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method Full article

Journal Journal of Materials Science: Materials in Electronics
ISSN: 1573-482X , E-ISSN: 0957-4522
Output data Year: 2019, Volume: 30, Number: 1, Pages: 812-823 Pages count : 12 DOI: 10.1007/s10854-018-0351-z
Authors Atuchin V.V. 1,2 , Lebedev M.S. 3 , Korolkov I.V. 4,5 , Kruchinin V.N. 6 , Maksimovskii E.A. 3,5 , Trubin S.V. 7
Affiliations
1 Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 630090
2 Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk, Russia 630090
3 Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk, Russia, 630090
4 Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk, Russia, 630090
5 Laboratory of Research Methods of Composition and Structure of Functional Materials, Novosibirsk State University, Novosibirsk, Russia 630090
6 Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 630090
7 Laboratory for Chemistry of Volatile Coordination and Metallorganic Compounds, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk, Russia, 630090
Cite: Atuchin V.V. , Lebedev M.S. , Korolkov I.V. , Kruchinin V.N. , Maksimovskii E.A. , Trubin S.V.
Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method
Journal of Materials Science: Materials in Electronics. 2019. V.30. N1. P.812-823. DOI: 10.1007/s10854-018-0351-z Scopus OpenAlex
Dates:
Submitted: Oct 8, 2018
Accepted: Nov 8, 2018
Published online: Nov 13, 2018
Identifiers:
Scopus: 2-s2.0-85056460912
OpenAlex: W2901255812
Citing:
DB Citing
OpenAlex 27
Scopus 28
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