Bis(trimethylsilyl)Ethylamine: Synthesis, Properties and its use as CVD Precursor Научная публикация
| Журнал |
Physics Procedia
ISSN: 1875-3892 |
||||
|---|---|---|---|---|---|
| Вых. Данные | Год: 2013, Том: 46, Страницы: 209-218 Страниц : 10 DOI: 10.1016/j.phpro.2013.07.069 | ||||
| Ключевые слова | Silicon carbonitride films, PECVD, organosilicon precursor, vapor pressure, hardness, optical band gap | ||||
| Авторы |
|
||||
| Организации |
|
Реферат:
is(trimethylsilyl)ethylamine (BTMSEA) was synthesized and characterized as CVD precursor for silicon carbonitride SiCxNy films synthesis (vapor pressure, thermodynamic modeling). SiCxNy films were deposited by PECVD from BTMSEA.in.the.temperature.range.of.100-700 oC.using.two.additional.gases.(He.or.NH3)..FT-IR,.Raman spectroscopy, ellipsometry, EDX, SEM, UV-Visible spectroscopy and nanoindentation tests were used for film characterization. FT-IR analysis showed that temperature increase lead to the transition from a low-temperature polymeric-like films to the high-temperature inorganic material. It was also shown that the high-temperature films content predominantly Si-C bonds independently on the additional gas type. As it was confirmed by Raman spectroscopy, high- temperature SiCxNy films content carbon phase. Ammonia addition into the reaction mixture resulted in the shift of the temperature boundary of carbon phase-free region. The transmittance of SiCxNy.films obtained using BTMSEA + He mixture in the deposition temperature range of 100-500 oC was 85-95% and decreased significantly in the case of carbon phase formation at Tdep more than 500 oC. Optical band gap estimated from UV-Vis spectra varied in the range of 1.9-4.4 eV depending on the deposition temperature. NH3 addition to initial mixture led to the film transmittance decrease to 80-90%, the optical band gap changed in the range of 2.0-5.1 eV. Nanoindentation tests showed that hardness of the films synthesized at high temperature was 18.5-21.5 GPa.
Библиографическая ссылка:
Ermakova E.
, Lis A.
, Kosinova M.
, Rumyantsev Y.
, Maximovskii E.
, Rakhlin V.
Bis(trimethylsilyl)Ethylamine: Synthesis, Properties and its use as CVD Precursor
Physics Procedia. 2013. V.46. P.209-218. DOI: 10.1016/j.phpro.2013.07.069 WOS Scopus РИНЦ OpenAlex
Bis(trimethylsilyl)Ethylamine: Synthesis, Properties and its use as CVD Precursor
Physics Procedia. 2013. V.46. P.209-218. DOI: 10.1016/j.phpro.2013.07.069 WOS Scopus РИНЦ OpenAlex
Даты:
| Опубликована online: | 29 июл. 2013 г. |
Идентификаторы БД:
| Web of science: | WOS:000323726000028 |
| Scopus: | 2-s2.0-84902328687 |
| РИНЦ: | 23975559 |
| OpenAlex: | W2035326821 |