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PECVD synthesis, optical and mechanical properties of silicon carbon nitride films Научная публикация

Журнал Applied Surface Science
ISSN: 1873-5584 , E-ISSN: 0169-4332
Вых. Данные Год: 2015, Том: 339, Страницы: 102-108 Страниц : 7 DOI: 10.1016/j.apsusc.2015.02.155
Ключевые слова SiCN films, PECVD, Optical band gap, Hardness, Young's modulus
Авторы Ermakova Evgeniya 1 , Rumyantsev Yurii 1 , Shugarov Artur 2 , Panin Alexey 2,3 , Kosinova Marina 1
Организации
1 Nikolaev Institute of Inorganic Chemistry SB RAS
2 Institute of Strength Physics and Materials Science SB RAS
3 National Research Tomsk Polytechnic University

Реферат: SiCxNy thin films were synthesized at a temperature of 700 °C by the PECVD process, using trimethylphenylsilane C6H5Si(CH3)3 (TMPhS) and ammonia as a reactive mixture. The effect of NH3 dilution on the structure and chemical bonding of SiCxNy films was investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy and energy-dispersive X-ray analysis. The influence of deposition conditions on the transmittance, the optical band gap, the hardness and the Young's modulus of SiCxNy films was studied. It was shown that the chemical composition and the functional properties of the films are governed by the initial pressure ratio of NH3 to TMPhS. The variation of the ratio enables the film of different composition to be deposited, e.g. SiCx, SiCxNy and SiNy. It was shown that the films deposited from a reactive mixture with the highest ammonia dilution had a transmittance comparable to that of SiO2 and hardness of 23 GPa.
Библиографическая ссылка: Ermakova E. , Rumyantsev Y. , Shugarov A. , Panin A. , Kosinova M.
PECVD synthesis, optical and mechanical properties of silicon carbon nitride films
Applied Surface Science. 2015. V.339. P.102-108. DOI: 10.1016/j.apsusc.2015.02.155 WOS Scopus РИНЦ OpenAlex
Даты:
Поступила в редакцию: 13 нояб. 2014 г.
Принята к публикации: 24 февр. 2015 г.
Опубликована online: 1 мар. 2015 г.
Опубликована в печати: 1 июн. 2015 г.
Идентификаторы БД:
Web of science: WOS:000351632600014
Scopus: 2-s2.0-84933036833
РИНЦ: 24052103
OpenAlex: W1975087148
Цитирование в БД:
БД Цитирований
Scopus 37
Web of science 35
OpenAlex 40
РИНЦ 37
Альметрики: