Abstract: Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiCxNy films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiCxNy films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiCxNy films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si–C–N–H system has demonstrated that SiCxNy films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.

Cite: Ermakova E.N. , Sysoev S.V. , Nikulina L.D. , Tsyrendorzhieva I.P. , Rakhlin V.I. , Kosinova M.L.
Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Thermochimica Acta. 2015. V.622. P.2-8. DOI: 10.1016/j.tca.2015.02.004 WOS Scopus РИНЦ OpenAlex

Dates:

Submitted:	Oct 15, 2014
Accepted:	Feb 4, 2015
Published online:	Feb 7, 2015
Published print:	Dec 20, 2015

Identifiers:

Web of science:	WOS:000367492400002
Scopus:	2-s2.0-84922932240
Elibrary:	41764318
OpenAlex:	W1968823214

Citing:

DB	Citing
Scopus	19
Web of science	18
OpenAlex	20
Elibrary	18

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