Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes Научная публикация

Журнал

Thermochimica Acta
ISSN: 1872-762X , E-ISSN: 0040-6031

Вых. Данные

Год: 2015, Том: 622, Страницы: 2-8 Страниц : 7 DOI: 10.1016/j.tca.2015.02.004

Ключевые слова

Organosilicon precursors, Chemical vapor deposition (CVD), SiCxNy films, Vapor pressure, Tensimetry

Авторы

Ermakova E.N. ¹ , Sysoev S.V. ¹ , Nikulina L.D. ¹ , Tsyrendorzhieva I.P. ² , Rakhlin V.I. ² , Kosinova M.L. ¹

Организации

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences
2	Favorskii Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences

Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiCxNy films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiCxNy films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiCxNy films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si–C–N–H system has demonstrated that SiCxNy films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.

Ermakova E.N. , Sysoev S.V. , Nikulina L.D. , Tsyrendorzhieva I.P. , Rakhlin V.I. , Kosinova M.L.
Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Thermochimica Acta. 2015. V.622. P.2-8. DOI: 10.1016/j.tca.2015.02.004 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	15 окт. 2014 г.
Принята к публикации:	4 февр. 2015 г.
Опубликована online:	7 февр. 2015 г.
Опубликована в печати:	20 дек. 2015 г.

Web of science:	WOS:000367492400002
Scopus:	2-s2.0-84922932240
РИНЦ:	41764318
OpenAlex:	W1968823214

БД	Цитирований
Scopus	19
Web of science	18
OpenAlex	20
РИНЦ	18