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Study of Cu diffusion behavior in carbon rich SiCN:H films deposited from trimethylphenylsilane Научная публикация

Журнал Thin Solid Films
ISSN: 1879-2731 , E-ISSN: 0040-6090
Вых. Данные Год: 2015, Том: 588, Страницы: 39-43 Страниц : 5 DOI: 10.1016/j.tsf.2015.04.058
Ключевые слова Low-k dielectrics, PECVD, Silicon carbide films SiC:H, Silicon carbonitride films SiCN:H, Nano-porosity, Cu diffusion
Авторы Ermakova E. 1 , Mogilnikov K. 2 , Rumyantsev Yu. 1 , Kichay V. 1 , Maximovskii E. 1 , Semenova O. 2 , Kosinova M. 1
Организации
1 Nikolaev Institute of Inorganic Chemistry SB RAS,
2 Rzhanov Institute of Semiconductor Physics SB RAS

Реферат: Amorphous SiCx:H and SiCxNy:H films were grown on Si (100) substrates by plasma enhanced chemical vapor deposition using trimethylphenylsilane as a precursor. Detailed studies including Fourier transformed infra-red spectrometry, elemental analysis, transmission electron microscopy, dielectric constant and porosity investigations, and preliminary Cu diffusion experiments were performed. It was shown that the films contained pores connected by narrow channels with a diameter of 5 Å, and the total porosity did not exceed 1.5%. The film with both low dielectric constant and low porosity was chosen for Cu diffusion barrier experiments. Si/SiCx:H/Cu structure was created and then annealed. The investigation of cross-sectional cut suggested that the film had good barrier properties against copper diffusion.
Библиографическая ссылка: Ermakova E. , Mogilnikov K. , Rumyantsev Y. , Kichay V. , Maximovskii E. , Semenova O. , Kosinova M.
Study of Cu diffusion behavior in carbon rich SiCN:H films deposited from trimethylphenylsilane
Thin Solid Films. 2015. V.588. P.39-43. DOI: 10.1016/j.tsf.2015.04.058 WOS Scopus РИНЦ OpenAlex
Даты:
Поступила в редакцию: 14 нояб. 2014 г.
Принята к публикации: 11 апр. 2015 г.
Опубликована online: 24 апр. 2015 г.
Опубликована в печати: 3 авг. 2015 г.
Идентификаторы БД:
Web of science: WOS:000354118400006
Scopus: 2-s2.0-84929169747
РИНЦ: 24031430
OpenAlex: W2063416540
Цитирование в БД:
БД Цитирований
Scopus 19
OpenAlex 19
РИНЦ 20
Альметрики: