Carbon-Rich Plasma-Deposited Silicon Oxycarbonitride Films Derived from 4-(Trimethylsilyl)morpholine as a Novel Single-Source Precursor Full article
Journal |
ChemPlusChem
ISSN: 1212-6950 , E-ISSN: 0010-0765 |
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Output data | Year: 2024, Volume: 89, Article number : e202400094, Pages count : 13 DOI: 10.1002/cplu.202400094 | ||||
Tags | PECVD; morpholine; optical bandgap; optical emission spectroscopy; organosilicon precursor; refractive index; silicon oxycarbonitride (SiCNO) coatings; thin film | ||||
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Abstract:
4-(trimethylsilyl)morpholine O(CH2CH2)2NSi(CH3)3 (TMSM) was investigated as a single-source precursor for SiCNO films synthesis. Optical emission spectroscopy of plasma generated from TMSM/He, TMSM/H2, and TMSM/NH3 gas mixtures revealed the presence of N2, CH, H, CN, and CO species. The last two are suggested to be responsible for the lowering of carbon concentration in the films in comparison with the precursor. The refractive index ranged from 1.5 to 2.0, and bandgap varied from 2.0 to 4.6 eV, which pointed that some of the films can be used as antireflective coatings in silicon photovoltaic cell technologies and dielectric layers in electronic devices.
Cite:
Ermakova E.
, Tsyrendorzhieva I.
, Mareev A.
, Pavlov D.
, Maslova O.
, Shayapov V.
, Maksimovskiy E.
, Yushina I.
, Kosinova M.
Carbon-Rich Plasma-Deposited Silicon Oxycarbonitride Films Derived from 4-(Trimethylsilyl)morpholine as a Novel Single-Source Precursor
ChemPlusChem. 2024. V.89. e202400094 :1-13. DOI: 10.1002/cplu.202400094 WOS Scopus РИНЦ OpenAlex
Carbon-Rich Plasma-Deposited Silicon Oxycarbonitride Films Derived from 4-(Trimethylsilyl)morpholine as a Novel Single-Source Precursor
ChemPlusChem. 2024. V.89. e202400094 :1-13. DOI: 10.1002/cplu.202400094 WOS Scopus РИНЦ OpenAlex
Dates:
Submitted: | Feb 2, 2024 |
Accepted: | Apr 24, 2024 |
Published print: | May 22, 2024 |
Identifiers:
Web of science: | WOS:001228585300001 |
Scopus: | 2-s2.0-85193818670 |
Elibrary: | 67255149 |
OpenAlex: | W4395458375 |
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