PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor Full article

Journal

ECS Journal of Solid State Science and Technology
ISSN: 2162-8769 , E-ISSN: 2162-8777

Output data

Year: 2015, Volume: 4, Number: 1, Pages: N3153-N3163 Pages count : DOI: 10.1149/2.0201501jss

Authors

Fainer N.I. ¹ , Plekhanov A.G. ¹ , Golubenko A.N. ² , Rumyantsev Yu.M. ¹ , Rakhlin V.I. ³ , Maximovski E.A. ¹ , Shayapov V.R. ¹

Affiliations

1	Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russia
2	Novosibirsk State University, Novosibirsk, Russia
3	Irkutsk Favorskii Institute of Chemistry SB RAS, Irkutsk, Russia

Fainer N.I. , Plekhanov A.G. , Golubenko A.N. , Rumyantsev Y.M. , Rakhlin V.I. , Maximovski E.A. , Shayapov V.R.
PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor
ECS Journal of Solid State Science and Technology. 2015. Т.4. №1. С.N3153-N3163. DOI: 10.1149/2.0201501jss WOS Scopus РИНЦ OpenAlex

Submitted:	Jul 16, 2014
Published print:	Nov 25, 2014

Web of science:	WOS:000349547900022
Scopus:	2-s2.0-84991660383
Elibrary:	27579762
OpenAlex:	W2121015280

DB	Citing
OpenAlex	25
Scopus	25
Elibrary	26