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Structural defects in SiCxNyHz films obtained by plasma-enhanced chemical deposition from hexamethyldisilazane vapor Full article

Journal Journal of Structural Chemistry
ISSN: 1573-8779 , E-ISSN: 0022-4766
Output data Year: 2015, Volume: 56, Number: 6, Pages: 1070-1075 Pages count : 6 DOI: 10.1134/S0022476615060074
Authors Shayapov V.R. 1 , Nadolinnyi V.A. 1 , Kozhemyachenko S.I. 1 , Rumyantsev Yu.M.Rumyantsev 1 , Fainer N.I. 1
Affiliations
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
Cite: Shayapov V.R. , Nadolinnyi V.A. , Kozhemyachenko S.I. , Rumyantsev Y.M.R. , Fainer N.I.
Structural defects in SiCxNyHz films obtained by plasma-enhanced chemical deposition from hexamethyldisilazane vapor
Journal of Structural Chemistry. 2015. V.56. N6. P.1070-1075. DOI: 10.1134/S0022476615060074 WOS Scopus РИНЦ OpenAlex
Original: Шаяпов В.Р. , Надолинный В.А. , Кожемяченко С.И. , Румянцев Ю.М. , Файнер Н.И.
Структурные дефекты в пленках SiCxNyHz, полученных плазмохимическим осаждением из паров гексаметилдисилазана
Журнал структурной химии. 2015. Т.56. №6. С.1123-1128. DOI: 10.15372/JSC20150607 РИНЦ OpenAlex
Identifiers:
Web of science: WOS:000368734000007
Scopus: 2-s2.0-84955518531
Elibrary: 26853365
OpenAlex: W2340179152
Citing:
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OpenAlex 1
Web of science 1
Scopus 1
Elibrary 1
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