Analysis of silicon carbonitride films by laser mass spectrometry

Analysis of silicon carbonitride films by laser mass spectrometry Full article

Journal

Journal of Analytical Chemistry
ISSN: 1608-3199 , E-ISSN: 1061-9348

Output data

Year: 2013, Volume: 68, Number: 14, Pages: 1212-1216 Pages count : 5 DOI: 10.1134/s1061934813140128

Tags

laser mass spectrometry; silicon carbonitride films; relative sensitivity coefficients; determination of carbon, nitrogen, oxygen and hydrogen

Authors

Sysoev V.I. ¹ , Troitsky D.Yu. ¹ , Saprykin A.I. ¹

Affiliations

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Ak. Lavrent’eva 3, Novosibirsk, 630090 Russia

The possibilities of laser mass spectrometry in determining the main composition of silicon carbonitride films (SiCxNy) deposited on a substrate made of germanium and gallium arsenide are considered. The conditions of laser sampling were selected and the instrument was adjusted to identify the major components of films synthesized by the plasma deposition. The instrument was calibrated by neat silicon compounds to obtain quantitative data on the concentrations of carbon, nitrogen, oxygen, and silicon. A calibration method was proposed, and the concentration of hydrogen in the layers of silicon carbonitride was estimated.

Sysoev V.I. , Troitsky D.Y. , Saprykin A.I.
Analysis of silicon carbonitride films by laser mass spectrometry
Journal of Analytical Chemistry. 2013. V.68. N14. P.1212-1216. DOI: 10.1134/s1061934813140128 WOS Scopus РИНЦ OpenAlex

Web of science:	WOS:000328834500009
Scopus:	2-s2.0-84891400707
Elibrary:	21904793
OpenAlex:	W2045720962

DB	Citing
OpenAlex	3
Web of science	2
Scopus	2
Elibrary	3