Analysis of silicon carbonitride films by laser mass spectrometry Научная публикация
| Журнал |
Journal of Analytical Chemistry
ISSN: 1608-3199 , E-ISSN: 1061-9348 |
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| Вых. Данные | Год: 2013, Том: 68, Номер: 14, Страницы: 1212-1216 Страниц : 5 DOI: 10.1134/s1061934813140128 | ||
| Ключевые слова | laser mass spectrometry; silicon carbonitride films; relative sensitivity coefficients; determination of carbon, nitrogen, oxygen and hydrogen | ||
| Авторы |
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| Организации |
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Реферат:
The possibilities of laser mass spectrometry in determining the main composition of silicon carbonitride films (SiCxNy) deposited on a substrate made of germanium and gallium arsenide are considered. The conditions of laser sampling were selected and the instrument was adjusted to identify the major components of films synthesized by the plasma deposition. The instrument was calibrated by neat silicon compounds to obtain quantitative data on the concentrations of carbon, nitrogen, oxygen, and silicon. A calibration method was proposed, and the concentration of hydrogen in the layers of silicon carbonitride was estimated.
Библиографическая ссылка:
Sysoev V.I.
, Troitsky D.Y.
, Saprykin A.I.
Analysis of silicon carbonitride films by laser mass spectrometry
Journal of Analytical Chemistry. 2013. V.68. N14. P.1212-1216. DOI: 10.1134/s1061934813140128 WOS Scopus РИНЦ OpenAlex
Analysis of silicon carbonitride films by laser mass spectrometry
Journal of Analytical Chemistry. 2013. V.68. N14. P.1212-1216. DOI: 10.1134/s1061934813140128 WOS Scopus РИНЦ OpenAlex
Идентификаторы БД:
| Web of science: | WOS:000328834500009 |
| Scopus: | 2-s2.0-84891400707 |
| РИНЦ: | 21904793 |
| OpenAlex: | W2045720962 |