Low dislocation density germanium crystal growth by modified heat exchange method Full article

Journal	Materials Science And Engineering: B ISSN: 0921-5107 , E-ISSN: 1873-4944
Output data	Year: 2025, Volume: 321, Article number : 118534, Pages count : 6 DOI: 10.1016/j.mseb.2025.118534
Tags	Crystal growth, Simiconductors, Germanium
Authors	Kurus A.F. 1,2,3 , Shlegel V.N. 1 , Isaenko L.I. 2,3
Affiliations	1 Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentyev ave., Novosibirsk 630090, Russia 2 Sobolev Institute of Geology and Mineralogy SB RAS, 3 Kopyug ave., Novosibirsk 630090, Russia 3 Novosibirsk State University, 2 Pirogov str., Novosibirsk 630090, Russia