Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate

Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate Full article

Journal

Chemical Communications
ISSN: 1359-7345 , E-ISSN: 1364-548X

Output data

Year: 2025, Volume: 61, Number: 63, Pages: 11774-11777 Pages count : 4 DOI: 10.1039/d5cc02613j

Authors

Álvarez-Yenes Ana ^1,2 , Koroteev Victor O ¹ , Ryzhikov Maxim R ³ , Ilyn Maxim ⁴ , Kozlova Svetlana G ³ , Knez Mato ^1,5

Affiliations

1	CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain. an.alvarez@nanogune.eu.
2	University of the Basque Country UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain.
3	Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science, 630090 Novosibirsk, Russian Federation.
4	Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain.
5	IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain.

Here, we report on a new atomic layer deposition (ALD) process for the growth of amorphous boron nitride thin films at low temperatures (100–275 °C) using carbamic acid, a highly reactive intermediate species found in the decomposition of ammonium carbamate, as the nitrogen source.

Álvarez-Yenes A. , Koroteev V.O. , Ryzhikov M.R. , Ilyn M. , Kozlova S.G. , Knez M.
Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate
Chemical Communications. 2025. V.61. N63. P.11774-11777. DOI: 10.1039/d5cc02613j WOS OpenAlex

Submitted:	May 8, 2025
Accepted:	Jun 26, 2025
Published online:	Jun 27, 2025
Published print:	Aug 14, 2025

Web of science:	WOS:001522481800001
OpenAlex:	W4411740104

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