Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate

Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate Научная публикация

Журнал

Chemical Communications
ISSN: 1359-7345 , E-ISSN: 1364-548X

Вых. Данные

Год: 2025, Том: 61, Номер: 63, Страницы: 11774-11777 Страниц : 4 DOI: 10.1039/d5cc02613j

Авторы

Álvarez-Yenes Ana ^1,2 , Koroteev Victor O ¹ , Ryzhikov Maxim R ³ , Ilyn Maxim ⁴ , Kozlova Svetlana G ³ , Knez Mato ^1,5

Организации

1	CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain. an.alvarez@nanogune.eu.
2	University of the Basque Country UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain.
3	Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science, 630090 Novosibirsk, Russian Federation.
4	Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain.
5	IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain.

Here, we report on a new atomic layer deposition (ALD) process for the growth of amorphous boron nitride thin films at low temperatures (100–275 °C) using carbamic acid, a highly reactive intermediate species found in the decomposition of ammonium carbamate, as the nitrogen source.

Álvarez-Yenes A. , Koroteev V.O. , Ryzhikov M.R. , Ilyn M. , Kozlova S.G. , Knez M.
Low temperature atomic layer deposition of boron nitride using the in-situ decomposition of ammonium carbamate
Chemical Communications. 2025. V.61. N63. P.11774-11777. DOI: 10.1039/d5cc02613j WOS OpenAlex

Поступила в редакцию:	8 мая 2025 г.
Принята к публикации:	26 июн. 2025 г.
Опубликована online:	27 июн. 2025 г.
Опубликована в печати:	14 авг. 2025 г.

Web of science:	WOS:001522481800001
OpenAlex:	W4411740104

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