Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions Full article
Journal |
Optical Materials
ISSN: 1873-1252 , E-ISSN: 0925-3467 |
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Output data | Year: 2025, Volume: 158, Article number : 116484, Pages count : 7 DOI: 10.1016/j.optmat.2024.116484 | ||||
Tags | RE3+ ions, luminescence, luminescence decay kinetics, energy transfer, proton irradiation | ||||
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Abstract:
Abstract CsLaSiS4 single crystals doped with Tb3+ and co-doped with Ce3+, Tb3+ ions were obtained by a high-temperature flux synthesis. XRD data demonstrate that the samples crystallize in the orthorhombic Pnma space group without additional reflections belonging to the impurity phases. Low-temperature luminescent spectroscopy methods have been used to study the efficiency of radiative transitions and energy transfer between Ce3+ and Tb3+ ions. Additionally, the effect of irradiation with protons with an energy of 18 MeV from a cyclotron was studied. Spectral-kinetic measurements of pulsed cathodo- and photoluminescence of samples co-doped with Ce3⁺ and Tb3⁺ revealed bidirectional energy transfer processes between these ions, the parameters of nonradiative energy transfer Ce3+ → Tb3+ were determined. The effect of concentration quenching is observed in undoped CsTbSiS4. The method of low-temperature thermally stimulated luminescence and the kinetics of pulsed cathodoluminescence indicate a high concentration of "shallow" carrier trapping centers in doped samples. When irradiating CsLaSiS4:0.5%Ce sample with protons, both the low-temperature emission of self-trapped excitons (STE) and the energy transfer STE → Ce3+ decrease, the luminescence yield of defect-bound excitons (DBE) also decreases compared to the emission of Ce3+ ions, and defects are mainly formed, which are the centers of nonradiative recombination of band charge carriers.
Cite:
Pustovarov V.A.
, Tavrunov D.A.
, Savinov E.O.
, Sarychev M.N.
, Sapov A.A.
, Tarasenko M.S.
Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions
Optical Materials. 2025. V.158. 116484 :1-7. DOI: 10.1016/j.optmat.2024.116484 WOS Scopus OpenAlex
Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions
Optical Materials. 2025. V.158. 116484 :1-7. DOI: 10.1016/j.optmat.2024.116484 WOS Scopus OpenAlex
Dates:
Submitted: | Sep 27, 2024 |
Accepted: | Nov 21, 2024 |
Published online: | Nov 22, 2024 |
Published print: | Jan 30, 2025 |
Identifiers:
Web of science: | WOS:001370130300001 |
Scopus: | 2-s2.0-85210124811 |
OpenAlex: | W4404635042 |
Citing:
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