Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions

Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions Научная публикация

Журнал

Optical Materials
ISSN: 1873-1252 , E-ISSN: 0925-3467

Вых. Данные

Год: 2025, Том: 158, Номер статьи : 116484, Страниц : 7 DOI: 10.1016/j.optmat.2024.116484

Ключевые слова

RE3+ ions, luminescence, luminescence decay kinetics, energy transfer, proton irradiation

Авторы

Pustovarov V.A. ¹ , Tavrunov D.A. ¹ , Savinov E.O. ¹ , Sarychev M.N. ¹ , Sapov A.A. ² , Tarasenko M.S. ²

Организации

1	Ural Federal University, 19 Mira St., Ekaterinburg, 620002, Russia
2	Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Ave. Lavrentiev, 3, Novosibirsk, 630090, Russia

Abstract CsLaSiS4 single crystals doped with Tb3+ and co-doped with Ce3+, Tb3+ ions were obtained by a high-temperature flux synthesis. XRD data demonstrate that the samples crystallize in the orthorhombic Pnma space group without additional reflections belonging to the impurity phases. Low-temperature luminescent spectroscopy methods have been used to study the efficiency of radiative transitions and energy transfer between Ce3+ and Tb3+ ions. Additionally, the effect of irradiation with protons with an energy of 18 MeV from a cyclotron was studied. Spectral-kinetic measurements of pulsed cathodo- and photoluminescence of samples co-doped with Ce3⁺ and Tb3⁺ revealed bidirectional energy transfer processes between these ions, the parameters of nonradiative energy transfer Ce3+ → Tb3+ were determined. The effect of concentration quenching is observed in undoped CsTbSiS4. The method of low-temperature thermally stimulated luminescence and the kinetics of pulsed cathodoluminescence indicate a high concentration of "shallow" carrier trapping centers in doped samples. When irradiating CsLaSiS4:0.5%Ce sample with protons, both the low-temperature emission of self-trapped excitons (STE) and the energy transfer STE → Ce3+ decrease, the luminescence yield of defect-bound excitons (DBE) also decreases compared to the emission of Ce3+ ions, and defects are mainly formed, which are the centers of nonradiative recombination of band charge carriers.

Pustovarov V.A. , Tavrunov D.A. , Savinov E.O. , Sarychev M.N. , Sapov A.A. , Tarasenko M.S.
Luminescence and energy transfer in CsLaSiS4 single crystals doped with Tb3+ and Ce3+ ions
Optical Materials. 2025. V.158. 116484 :1-7. DOI: 10.1016/j.optmat.2024.116484 WOS Scopus OpenAlex

Поступила в редакцию:	27 сент. 2024 г.
Принята к публикации:	21 нояб. 2024 г.
Опубликована online:	22 нояб. 2024 г.
Опубликована в печати:	30 янв. 2025 г.

Web of science:	WOS:001370130300001
Scopus:	2-s2.0-85210124811
OpenAlex:	W4404635042

БД	Цитирований
OpenAlex	2