Passivation Properties of Atomic-Layer-Deposited Hafnium Oxide on Black Silicon Surface

Passivation Properties of Atomic-Layer-Deposited Hafnium Oxide on Black Silicon Surface Full article

Source

2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings"
Compilation, Institute of Electrical and Electronics Engineers Inc.. 2021. 385 c. ISBN 978-1-6654-4528-3.

Output data

Year: 2021, Pages: 145-147 Pages count : 3 DOI: 10.1109/miel52794.2021.9569183

Authors

Ayvazyan G.Y. ¹ , Aghabekyan A.V. ¹ , Hakhoyan L.A. ¹ , Katkov M.V. ² , Lebedev M.S. ²

Affiliations

1	Department of Radioelectronics, National Polytechnic, University of Armenia, Yerevan, Armenia
2	Laboratory of Functional Films and Coatings, Institute of Inorganic Chemistry, Acad., Novosibirsk, Russia

Ayvazyan G.Y. , Aghabekyan A.V. , Hakhoyan L.A. , Katkov M.V. , Lebedev M.S.
Passivation Properties of Atomic-Layer-Deposited Hafnium Oxide on Black Silicon Surface
In compilation 2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings". – Institute of Electrical and Electronics Engineers Inc.., 2021. – C.145-147. – ISBN 978-1-6654-4528-3. DOI: 10.1109/miel52794.2021.9569183 OpenAlex

OpenAlex:

W3209632655

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