Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection

Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection Full article

Journal

Advanced Functional Materials
ISSN: 1616-301X , E-ISSN: 1616-3028

Output data

Year: 2025, Volume: 35, Number: 3, Article number : 2413612, Pages count : 8 DOI: 10.1002/adfm.202413612

Authors

Jia Zhenglin ¹ , Davydova Maria P. ² , Sukhikh Taisiya S. ² , Liu Hailin ¹ , Liu Yong ¹ , Artem'ev Alexander V. ² , Lin Qianqian ¹

Affiliations

1	Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China
2	Nikolaev Institute of Inorganic Chemistry, SB RAS, 3, Lavrentiev Ave., Novosibirsk 630090, Russia.

Jia Z. , Davydova M.P. , Sukhikh T.S. , Liu H. , Liu Y. , Artem'ev A.V. , Lin Q.
Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection
Advanced Functional Materials. 2025. V.35. N3. 2413612 :1-8. DOI: 10.1002/adfm.202413612 WOS Scopus РИНЦ OpenAlex

Published print:

Jan 15, 2025

Web of science:	WOS:001314467100001
Scopus:	2-s2.0-85204284780
Elibrary:	74237521
OpenAlex:	W4402604974

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