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Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection Full article

Journal Advanced Functional Materials
ISSN: 1616-301X , E-ISSN: 1616-3028
Output data Year: 2025, Volume: 35, Number: 3, Article number : 2413612, Pages count : 8 DOI: 10.1002/adfm.202413612
Authors Jia Zhenglin 1 , Davydova Maria P. 2 , Sukhikh Taisiya S. 2 , Liu Hailin 1 , Liu Yong 1 , Artem'ev Alexander V. 2 , Lin Qianqian 1
Affiliations
1 Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China
2 Nikolaev Institute of Inorganic Chemistry, SB RAS, 3, Lavrentiev Ave., Novosibirsk 630090, Russia.
Cite: Jia Z. , Davydova M.P. , Sukhikh T.S. , Liu H. , Liu Y. , Artem'ev A.V. , Lin Q.
Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection
Advanced Functional Materials. 2025. V.35. N3. 2413612 :1-8. DOI: 10.1002/adfm.202413612 WOS Scopus РИНЦ OpenAlex
Dates:
Published print: Jan 15, 2025
Identifiers:
Web of science: WOS:001314467100001
Scopus: 2-s2.0-85204284780
Elibrary: 74237521
OpenAlex: W4402604974
Citing:
DB Citing
Web of science 1
OpenAlex 2
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