Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection

Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection Научная публикация

Журнал

Advanced Functional Materials
ISSN: 1616-301X , E-ISSN: 1616-3028

Вых. Данные

Год: 2025, Том: 35, Номер: 3, Номер статьи : 2413612, Страниц : 8 DOI: 10.1002/adfm.202413612

Авторы

Jia Zhenglin ¹ , Davydova Maria P. ² , Sukhikh Taisiya S. ² , Liu Hailin ¹ , Liu Yong ¹ , Artem'ev Alexander V. ² , Lin Qianqian ¹

Организации

1	Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P.R. China
2	Nikolaev Institute of Inorganic Chemistry, SB RAS, 3, Lavrentiev Ave., Novosibirsk 630090, Russia.

Jia Z. , Davydova M.P. , Sukhikh T.S. , Liu H. , Liu Y. , Artem'ev A.V. , Lin Q.
Optoelectronics of Lead‐Free Antimony‐ and Bismuth‐Based Metal Halides for Sensitive and Low‐Noise Photodetection
Advanced Functional Materials. 2025. V.35. N3. 2413612 :1-8. DOI: 10.1002/adfm.202413612 WOS Scopus РИНЦ OpenAlex

Опубликована в печати:

15 янв. 2025 г.

Web of science:	WOS:001314467100001
Scopus:	2-s2.0-85204284780
РИНЦ:	74237521
OpenAlex:	W4402604974

БД	Цитирований
Web of science	1
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