Thermal properties of some organosilicon precursors for chemical vapor deposition

Thermal properties of some organosilicon precursors for chemical vapor deposition Научная публикация

Журнал

Journal of Thermal Analysis and Calorimetry
ISSN: 1388-6150 , E-ISSN: 1572-8943

Вых. Данные

Год: 2016, Том: 126, Страницы: 609-616 Страниц : 8 DOI: 10.1007/s10973-016-5563-y

Ключевые слова

Volatile organosilicon compounds, DTA-TG, Vapor pressure, Tensimetry, Thermodynamic characteristics

Авторы

Ermakova E.N. ¹ , Sysoev S.V. ¹ , Nikolaev R.E. ¹ , Nikulina L.D. ¹ , Lis A.V. ² , Tsyrendorzhieva I.P. ² , Rakhlin V.I. ² , Plyusnin P.E. ^1,3 , Kosinova M.L. ¹

Организации

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences
2	Favorskii Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences
3	Novosibirsk State University

Five volatile organosilicon compounds: trimethyl(phenyl)silane Me3SiC6H5 (I), trimethyl(cyclohexyl)silane Me3SiC6H11 (II), trimethyl(phenoxy)silane Me3SiOC6H5 (III), trimethyl(cyclohexyloxy)silane Me3SiOC6H11 (IV), and trimethyl(allyloxy)silane Me3SiOC3H5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas–liquid chromatography; and 1H NMR, 13C NMR, 29Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me3SiOC6H5, Me3SiC6H5, Me3SiC6H11, Me3SiOC6H11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me3SiOC3H5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II–V were determined for the first time.

Ermakova E.N. , Sysoev S.V. , Nikolaev R.E. , Nikulina L.D. , Lis A.V. , Tsyrendorzhieva I.P. , Rakhlin V.I. , Plyusnin P.E. , Kosinova M.L.
Thermal properties of some organosilicon precursors for chemical vapor deposition
Journal of Thermal Analysis and Calorimetry. 2016. V.126. P.609-616. DOI: 10.1007/s10973-016-5563-y WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	25 дек. 2015 г.
Принята к публикации:	14 мая 2016 г.
Опубликована в печати:	14 июн. 2016 г.

Web of science:	WOS:000385246400026
Scopus:	2-s2.0-84974827173
РИНЦ:	29464418
OpenAlex:	W2432940536

БД	Цитирований
Scopus	10
OpenAlex	11
РИНЦ	10