Mechanical stresses in silicon carbonitride films obtained by PECVD from hexamethyldisilazane Научная публикация
| Журнал |
Applied Surface Science
ISSN: 1873-5584 , E-ISSN: 0169-4332 |
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| Вых. Данные | Год: 2013, Том: 265, Страницы: 385-388 Страниц : 4 DOI: 10.1016/j.apsusc.2012.11.017 | ||
| Ключевые слова | Mechanical stresses, Film, PECVD, Silicon carbonitride | ||
| Авторы |
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| Организации |
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Реферат:
Silicon carbonitride films were obtained by PECVD method from hexamethyldisilazane at different deposition temperatures. Mechanical stresses in the films were studied by laser beam deflection method. It was found that the films deposited at low temperatures (below 400 °C) are in compressive internal stresses because of the volume expansion of the growing film. Meanwhile, the films deposited at high temperatures (above 400 °C) have tensile stresses due to volume contraction during deposition. In addition, the dependences of coefficient of thermal expansion and Young's modulus of the films on deposition temperature are obtained. The results are discussed in the light of known features of the deposition process and also chemical and phase composition of the films.
Библиографическая ссылка:
Shayapov V.R.
, Rumyantsev Y.M.
, Dzyuba A.A.
, Ayupov B.M.
, Fainer N.I.
Mechanical stresses in silicon carbonitride films obtained by PECVD from hexamethyldisilazane
Applied Surface Science. 2013. V.265. P.385-388. DOI: 10.1016/j.apsusc.2012.11.017 WOS Scopus РИНЦ OpenAlex
Mechanical stresses in silicon carbonitride films obtained by PECVD from hexamethyldisilazane
Applied Surface Science. 2013. V.265. P.385-388. DOI: 10.1016/j.apsusc.2012.11.017 WOS Scopus РИНЦ OpenAlex
Даты:
| Поступила в редакцию: | 18 мая 2012 г. |
| Принята к публикации: | 4 нояб. 2012 г. |
| Опубликована online: | 9 нояб. 2012 г. |
| Опубликована в печати: | 15 янв. 2013 г. |
Идентификаторы БД:
| Web of science: | WOS:000312958500061 |
| Scopus: | 2-s2.0-84871931231 |
| РИНЦ: | 20416990 |
| OpenAlex: | W2077048894 |