Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films Научная публикация

Журнал

Materials Letters
ISSN: 1873-4979 , E-ISSN: 0167-577X

Вых. Данные

Год: 2021, Том: 293, Номер статьи : 129723, Страниц : DOI: 10.1016/j.matlet.2021.129723

Авторы

Zamchiy A.O. ^1,2 , Baranov E.A. ¹ , Merkulova I.E. ^1,2 , Korolkov I.V. ³ , Vdovin V.I. ⁴ , Gutakovskii A.K. ^2,4 , Volodin V.A. ^2,4

Организации

1	Kutateladze Institute of Thermophysics SB RAS, Ac. Lavrentiev Ave. 1, 630090 Novosibirsk, Russia
2	Novosibirsk State University, Pirogova str. 1, 630090 Novosibirsk, Russia
3	Nikolaev Institute of Inorganic Chemistry SB RAS, Ac. Lavrentiev Ave. 3, 630090 Novosibirsk, Russia
4	Rzhanov Institute of Semiconductor Physics SB RAS, Ac. Lavrentiev Ave. 13, 630090 Novosibirsk, Russia

Zamchiy A.O. , Baranov E.A. , Merkulova I.E. , Korolkov I.V. , Vdovin V.I. , Gutakovskii A.K. , Volodin V.A.
Layer exchange during aluminum-induced crystallization of silicon suboxide thin films
Materials Letters. 2021. V.293. 129723 . DOI: 10.1016/j.matlet.2021.129723 WOS Scopus РИНЦ OpenAlex

Web of science:	WOS:000686901300018
Scopus:	2-s2.0-85103129731
РИНЦ:	6762694
OpenAlex:	W3138008543

БД	Цитирований
OpenAlex	7
Scopus	5
Web of science	5