Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process Научная публикация

Журнал

Materials Letters
ISSN: 1873-4979 , E-ISSN: 0167-577X

Вых. Данные

Год: 2020, Том: 261, Номер статьи : 127086, Страниц : DOI: 10.1016/j.matlet.2019.127086

Авторы

Zamchiy A.O. ^1,2 , Baranov E.A. ¹ , Maximovskiy E.A. ^3,2 , Volodin V.A. ^2,4 , Vdovin V.I. ⁴ , Gutakovskii A.K. ^2,4 , Korolkov I.V. ^3,2

Организации

1	Kutateladze Institute of Thermophysics SB RAS, Ac. Lavrentiev Ave. 1, 630090 Novosibirsk, Russia
2	Novosibirsk State University, Pirogova Str. 2, 630090 Novosibirsk, Russia
3	Nikolaev Institute of Inorganic Chemistry SB RAS, Ac. Lavrentiev Ave. 3, 630090 Novosibirsk, Russia
4	Rzhanov Institute of Semiconductor Physics SB RAS, Ac. Lavrentiev Ave. 13, 630090 Novosibirsk, Russia

Zamchiy A.O. , Baranov E.A. , Maximovskiy E.A. , Volodin V.A. , Vdovin V.I. , Gutakovskii A.K. , Korolkov I.V.
Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process
Materials Letters. 2020. V.261. 127086 . DOI: 10.1016/j.matlet.2019.127086 WOS Scopus РИНЦ OpenAlex

Web of science:	WOS:000506193100038
Scopus:	2-s2.0-85076695577
РИНЦ:	43215698
OpenAlex:	W2990749958

БД	Цитирований
OpenAlex	15
Scopus	11
Web of science	11
РИНЦ	13