Anomalous fast luminescence of CsCeSiS4 thiosilicate Full article
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Technical Physics Letters
ISSN: 1090-6533 , E-ISSN: 1063-7850 |
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Output data | Year: 2024, Volume: 50, Number: 2, Pages: 1-4 Pages count : 4 DOI: 10.61011/PJTF.2024.03.57035.19714 | ||||
Tags | Ce3+ ion, luminescence decay kinetics, interconfigurational transitions, synchrotron radiation | ||||
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Abstract:
CsCeSiS4 thiosilicate single crystals were obtained by high-temperature flux synthesis. The absorption spectrum in the region of 450 nm is formed by f-> d transitions in the Ce3+ ion. The nonelementary 5d-> 4f band of Ce3+ ion emission is observed in the photo- and X-ray excited luminescence spectra in the region of 520 nm at temperatures of 5-330 K. The inertialess luminescence decay kinetics upon excitation by X-ray synchrotron radiation is characterized by a dominant component with a decay time tau=0.88 ns. The luminescence of Ce3+ ions is efficiently excited by the intracenter way or due to the recombination of band charge carriers. Keywords: Ce3+ ion, luminescence decay kinetics, interconfigurational transitions, synchrotron radiation.
Cite:
Pustovarov V.A.
, Tavrunov D.A.
, Tarasenko M.S.
, Naumov N.G.
Anomalous fast luminescence of CsCeSiS4 thiosilicate
Technical Physics Letters. 2024. V.50. N2. P.1-4. DOI: 10.61011/PJTF.2024.03.57035.19714
Anomalous fast luminescence of CsCeSiS4 thiosilicate
Technical Physics Letters. 2024. V.50. N2. P.1-4. DOI: 10.61011/PJTF.2024.03.57035.19714
Original:
Пустоваров В.А.
, Таврунов Д.А.
, Тарасенко М.С.
, Наумов Н.Г.
Аномально быстрая люминесценция тиосиликата CsСеSiS4
Письма в журнал технической физики. 2024. Т.50. №3. С.3-6. РИНЦ
Аномально быстрая люминесценция тиосиликата CsСеSiS4
Письма в журнал технической физики. 2024. Т.50. №3. С.3-6. РИНЦ
Dates:
Submitted: | Aug 30, 2023 |
Accepted: | Nov 2, 2023 |
Published online: | Jan 13, 2024 |
Published print: | Feb 1, 2024 |
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