Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method

Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method Научная публикация

Журнал

Materials
ISSN: 1996-1944

Вых. Данные

Год: 2020, Том: 13, Номер: 5, Номер статьи : 1173, Страниц : 14 DOI: 10.3390/ma13051173

Ключевые слова

few-layer graphene; doping; nitrogen; phosphorus; CVD; electronic structure; resistivity

Авторы

Bulusheva L.G. ^1,2 , Arkhipov V.E. ¹ , Popov K.M. ¹ , Sysoev V.I. ^1,2 , Makarova A.A. ³ , Okotrub A.V. ^1,2

Организации

1	Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Acad. Lavrentiev Ave., Novosibirsk 630090, Russia
2	Department of Natural Sciences, Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090, Russia
3	Physical Chemistry, Institute of Chemistry and Biochemistry, Free University of Berlin, 14195 Berlin, Germany

Bulusheva L.G. , Arkhipov V.E. , Popov K.M. , Sysoev V.I. , Makarova A.A. , Okotrub A.V.
Electronic Structure of Nitrogen- and Phosphorus-Doped Graphenes Grown by Chemical Vapor Deposition Method
Materials. 2020. V.13. N5. 1173 :1-14. DOI: 10.3390/ma13051173 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	18 янв. 2020 г.
Принята к публикации:	2 мар. 2020 г.
Опубликована online:	6 мар. 2020 г.

Web of science:	WOS:000524060200151
Scopus:	2-s2.0-85081595106
РИНЦ:	43257555
OpenAlex:	W3009801847

БД	Цитирований
Web of science	21
Scopus	23
РИНЦ	21
OpenAlex	22