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Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir–Blodgett Method Научная публикация

Журнал Langmuir
ISSN: 1520-5827 , E-ISSN: 0743-7463
Вых. Данные Год: 2021, Том: 37, Номер: 18, Страницы: 5651-5658 Страниц : 8 DOI: 10.1021/acs.langmuir.1c00526
Авторы Svit Kirill A. 1 , Zarubanov Alexandr A. 1 , Duda Tatyana A. 1 , Trubina Svetlana V. 2 , Zvereva Valentina V. 2 , Fedosenko Evgeniy V. 1 , Zhuravlev Konstantin S. 1
Организации
1 Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia
2 Nikolaev Institute of Inorganic Chemistry, Siberian Branch Russian Academy of Sciences, 3 Lavrentyev Ave., Novosibirsk, 630090, Russia

Реферат: The crystal structure and shape of the CdS quantum dots (QDs) obtained by the Langmuir−Blodgett method were studied by transmission electron microscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), and ultraviolet spectroscopy. X-ray photoelectron spectroscopy (XPS) and stationary photoluminescence spectroscopy (PL) methods were used to determine the dominant surface defects. Initially synthesized QDs within the Langmuir−Blodgett film of fatty behenic acid have a cubic structure and oblate spheroid shape, while free-standing QDs obtained after the matrix evaporation have a wurtzite structure and sphere-like shape. QDs within the matrix demonstrate a wide PL band centered at 2.3 eV corresponding to defect-assisted radiative recombination; after the matrix annealing and passivation of the QD surface in an ammonia atmosphere, the PL spectrum demonstrates a high-intensity band-edge peak together with a low-intensity defect assisted shoulder. It was established that sulfur (VS) vacancies are the dominating defects. A model of simultaneous band-edge and defect assisted recombination through the VS level was proposed.
Библиографическая ссылка: Svit K.A. , Zarubanov A.A. , Duda T.A. , Trubina S.V. , Zvereva V.V. , Fedosenko E.V. , Zhuravlev K.S.
Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir–Blodgett Method
Langmuir. 2021. V.37. N18. P.5651-5658. DOI: 10.1021/acs.langmuir.1c00526 WOS Scopus OpenAlex
Идентификаторы БД:
≡ Web of science: WOS:000651528200023
≡ Scopus: 2-s2.0-85106463963
≡ OpenAlex: W3157682807
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