Thermodynamic Modeling of Phase Formation in the Co–Si–C–H System Научная публикация
| Журнал |
Russian Journal of Inorganic Chemistry
ISSN: 0036-0236 , E-ISSN: 1531-8613 |
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| Вых. Данные | Год: 2026, Том: 71, Номер: 3, Страницы: 371–374 Страниц : 4 DOI: 10.1134/S0036023626600292 | ||
| Ключевые слова | chemical vapor deposition, thin films, cobaltocene, silicon carbide, cobalt silicides | ||
| Авторы |
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| Организации |
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Реферат:
Thermodynamic modeling of the film synthesis process from the gas phase in the Co–Si–C–H
system was performed during the decomposition of cobaltocene in a mixture with silane and hydrogen to plot
chemical vapor deposition (CVD) diagrams. It was assumed that the process occurs in a quasi-equilibrium
regime and that the film and gas phase composition in the reactor correspond to the minimum Gibbs energy
in the system. It was shown that various phase complexes containing silicon carbide and cobalt silicides can
be obtained in the studied system. Depending on the CVD process parameters (reactor temperature, composition
of the initial gas mixture), the following complexes can be obtained: CoSi + SiC, CoSi + SiC + C,
CoSi2 + CoSi + SiC, and CoSi2 + SiC + Si. The calculation results can be used to develop a gas-phase process
for the formation of coatings consisting of these phases.
Библиографическая ссылка:
Shestakov V.A.
, Kosinova M.L.
Thermodynamic Modeling of Phase Formation in the Co–Si–C–H System
Russian Journal of Inorganic Chemistry. 2026. V.71. N3. P.371–374. DOI: 10.1134/S0036023626600292
Thermodynamic Modeling of Phase Formation in the Co–Si–C–H System
Russian Journal of Inorganic Chemistry. 2026. V.71. N3. P.371–374. DOI: 10.1134/S0036023626600292
Даты:
| Поступила в редакцию: | 26 нояб. 2025 г. |
| Принята к публикации: | 4 февр. 2026 г. |
Идентификаторы БД:
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