Effect of SiO2 buffer layer on phase transition properties of VO2 films fabricated by low-pressure chemical vapor deposition

Effect of SiO2 buffer layer on phase transition properties of VO2 films fabricated by low-pressure chemical vapor deposition Научная публикация

Журнал

Journal of Vacuum Science & Technology A
ISSN: 0734-2101 , E-ISSN: 1520-8559

Вых. Данные

Год: 2022, Том: 40, Номер: 6, Номер статьи : 063404, Страниц : DOI: 10.1116/6.0002146

Авторы

Mutilin Sergey ¹ , Kapoguzov Kirill ^1,2 , Prinz Victor ¹ , Yakovkina Lyubov ³

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS 1 , Acad. Lavrentiev Ave., 13, Novosibirsk 630090, Russia
2	Department of Physics, Novosibirsk State University, Pirogov str., 1, Novosibirsk 630090, Russia
3	Nikolaev Institute of Inorganic Chemistry SB RAS, Acad. Lavrentiev Ave., 3, Novosibirsk 630090, Russia

Mutilin S. , Kapoguzov K. , Prinz V. , Yakovkina L.
Effect of SiO2 buffer layer on phase transition properties of VO2 films fabricated by low-pressure chemical vapor deposition
Journal of Vacuum Science & Technology A. 2022. V.40. N6. 063404 . DOI: 10.1116/6.0002146 Scopus OpenAlex

Поступила в редакцию:	8 авг. 2022 г.
Опубликована в печати:	31 дек. 2022 г.

≡ Scopus:	2-s2.0-85141867020
≡ OpenAlex:	W4307885291