Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches

Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches Научная публикация

Журнал

Physica E: Low-dimensional Systems and Nanostructures
ISSN: 1386-9477

Вых. Данные

Год: 2025, Том: 167, Номер статьи : 116165, Страниц : 11 DOI: 10.1016/j.physe.2024.116165

Ключевые слова

Vanadium dioxideNanocrystalsPost-growth annealingAtomic-layer depositionSemiconductor-to-metal phase transitionResistive switching

Авторы

Kapoguzov K.E. ^1,2 , Mutilin S.V. ¹ , Lysenko N.I. ¹ , Kichay V.N. ³ , Yakovkina L.V. ³ , Voloshin B.V. ¹ , Seleznev V.A. ¹

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS
2	Novosibirsk State University
3	Nikolaev Institute of Inorganic Chemistry SB RAS

The abrupt and reversible semiconductor-metal phase transition in vanadium dioxide nanocrystals has attracted considerable attention for potential applications in oxide electronics, including neuromorphic systems. This study presents a systematic investigation of post-growth annealing conditions for the formation of single VO 2 M- phase nanocrystals arrays from VO x films synthesized by atomic layer deposition. The composition of the initial VO x films and the annealing parameters were found to significantly affect the morphology, phase composition and electrical properties of the obtained single nanocrystal arrays. Our results demonstrate that the formation of VO 2 M-phase nanocrystal arrays occurs at annealing temperatures of 650 ◦ C and above, irrespective of the initial film composition. More homogeneous in size nanocrystals are formed from initial VO x films with higher V +4 content. The structures with the initial V +4 content of 60 % annealed at 650 ◦ C for 2 h demonstrates the resistive switching with an energy less than 150 fJ, and a total number of stable switching cycles more than 10 1 ⁰. Our results pave the way for the novel energy-efficient nanoelectronic and nanophotonic devices based on VO₂ nanoparticles.

Kapoguzov K.E. , Mutilin S.V. , Lysenko N.I. , Kichay V.N. , Yakovkina L.V. , Voloshin B.V. , Seleznev V.A.
Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches
Physica E: Low-dimensional Systems and Nanostructures. 2025. V.167. 116165 :1-11. DOI: 10.1016/j.physe.2024.116165 WOS OpenAlex

Поступила в редакцию:	23 сент. 2024 г.
Принята к публикации:	22 нояб. 2024 г.
Опубликована online:	26 нояб. 2024 г.
Опубликована в печати:	1 февр. 2025 г.

Web of science:	WOS:001370737000001
OpenAlex:	W4404726704

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