Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates

Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates Научная публикация

Журнал

Materials
ISSN: 1996-1944

Вых. Данные

Год: 2022, Том: 15, Номер: 21, Номер статьи : 7863, Страниц : 14 DOI: 10.3390/ma15217863

Авторы

Mutilin Sergey V. ¹ , Yakovkina Lyubov V. ² , Seleznev Vladimir A. ¹ , Prinz Victor Ya. ¹

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, Russia
2	Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentiev Aven., 630090 Novosibirsk, Russia

Mutilin S.V. , Yakovkina L.V. , Seleznev V.A. , Prinz V.Y.
Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates
Materials. 2022. V.15. N21. 7863 :1-14. DOI: 10.3390/ma15217863 WOS OpenAlex

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