Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology Full article

Journal

Thin Solid Films
ISSN: 1879-2731 , E-ISSN: 0040-6090

Output data

Year: 2020, Volume: 701, Article number : 137967, Pages count : 8 DOI: 10.1016/j.tsf.2020.137967

Authors

Prud'homme Nathalie ¹ , Constantoudis Vassilios ^2,3 , Turgambaeva Asiya E. ⁴ , Krisyuk Vladislav V. ⁴ , Samélor Diane ⁵ , Senocq François ⁵ , Vahlas Constantin ⁵

Affiliations

1	ICMMO, Université Paris-Sud, Université Paris-Saclay, 15 Rue Georges Clemenceau, 91405 Orsay Cedex, France.
2	NCSR Demokritos, Neapoleos 10, 15310 Ag. Paraskevi, Greece
3	Nanometrisis
4	Nikolaev Institute of Inorganic Chemistry SB RAS
5	CIRIMAT, ENSIACET

Prud'homme N. , Constantoudis V. , Turgambaeva A.E. , Krisyuk V.V. , Samélor D. , Senocq F. , Vahlas C.
Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology
Thin Solid Films. 2020. V.701. 137967 :1-8. DOI: 10.1016/j.tsf.2020.137967 WOS OpenAlex

Web of science:	WOS:000525745900004
OpenAlex:	W3011251792

DB	Citing
Web of science	6
OpenAlex	8