Laser chemical vapor deposition of nitrogen-doped SiC electrode for electrochemical detection of uric acid

Laser chemical vapor deposition of nitrogen-doped SiC electrode for electrochemical detection of uric acid Научная публикация

Журнал

Surfaces and Interfaces
ISSN: 2468-0230

Вых. Данные

Год: 2024, Том: 51, Номер статьи : 104704, Страниц : 10 DOI: 10.1016/j.surfin.2024.104704

Ключевые слова

N-doped SiC, LCVD, Electrochemical detection, Uric acid

Авторы

Li Cuicui ¹ , Xu Qingfang ^1,2 , Zhu Jiawei ¹ , Luo Tingting ³ , Yang Meijun ¹ , Dai Honglian ¹ , Kosinova Marina L. ⁴ , Zhang Song ^1,5 , Tu Rong ^1,5,6

Организации

1	State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China
2	School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430070, PR China
3	Center for Materials Research and Analysis Testing, Wuhan University of Technology, Wuhan 430070, PR China
4	Nikolaev Institute of Inorganic Chemistry, Russian Academy of Sciences Siberian Branch, Novosibirsk 630090, Russia
5	Chaozhou Branch of Chemistry and Chemical Engineering Guangdong Laboratory, Chaozhou 521000, PR China
6	Hubei Technology Innovation Center for Advanced Composites, Wuhan University of Technology, Wuhan 430070, PR China

Reasonable design and construction of high-performance electrodes are desirable for developing non-enzymatic electrochemical sensors for uric acid (UA). Herein, N-doped SiC film was prepared as an electrochemical elec trode using a novel laser chemical vapor deposition (LCVD) method. Compared with its undoped counterpart, the doped electrode exhibited a low detection limit of 0.77 μM and a high detection sensitivity of 9.75 µA µM− 1 cm− 2 owing to its large active sites and fast electron transfer rate. Furthermore, the as-developed electrode clearly exhibited immunity towards the coexisting interfering species, such as dopamine and ascorbic acid, and facili tated the quantitative analysis of UA in real-world samples. In addition, the effects of N doping on electro chemical sensing were verified via theoretical calculations by investigating adsorption energy and Bader charge. Our works verify the feasibility of introducing N into SiC to enhance UA sensing performance and fabricating on chip electrochemical sensors, which may spur the development of advanced and portable SiC-based biosensors for health monitoring.

Li C. , Xu Q. , Zhu J. , Luo T. , Yang M. , Dai H. , Kosinova M.L. , Zhang S. , Tu R.
Laser chemical vapor deposition of nitrogen-doped SiC electrode for electrochemical detection of uric acid
Surfaces and Interfaces. 2024. V.51. 104704 :1-10. DOI: 10.1016/j.surfin.2024.104704 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	29 февр. 2024 г.
Принята к публикации:	28 июн. 2024 г.
Опубликована online:	29 июн. 2024 г.
Опубликована в печати:	1 авг. 2024 г.

Web of science:	WOS:001270484500001
Scopus:	2-s2.0-85198075018
РИНЦ:	69030857
OpenAlex:	W4400146263

БД	Цитирований
Web of science	3
OpenAlex	4