Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition Научная публикация

Журнал

Coatings
ISSN: 2079-6412

Вых. Данные

Год: 2022, Том: 12, Номер: 3, Номер статьи : 329, Страниц : 13 DOI: 10.3390/coatings12030329

Авторы

Tu Rong ^1,2,3 , Liu Chengyin ¹ , Xu Qingfang ¹ , Liu Kai ¹ , Li Qizhong ¹ , Zhang Xian ³ , Kosinova Marina L. ⁴ , Goto Takashi ¹ , Zhang Song ¹

Организации

1	State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
2	Chaozhou Branch of Chemistry and Chemical Engineering Guangdong Laboratory, Chaozhou 521000, China
3	Wuhan University of Technology Advanced Engineering Technology Research Institute of Zhongshan City, Zhongshan 528400, China
4	Nikolaev Institute of Inorganic Chemistry, Russian Academy of Sciences Siberian Branch, 3 Acad. Lavrerntiev Pr., 630090 Novosibirsk, Russia

Tu R. , Liu C. , Xu Q. , Liu K. , Li Q. , Zhang X. , Kosinova M.L. , Goto T. , Zhang S.
Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition
Coatings. 2022. V.12. N3. 329 :1-13. DOI: 10.3390/coatings12030329 WOS Scopus РИНЦ OpenAlex

Поступила в редакцию:	18 янв. 2022 г.
Опубликована в печати:	2 мар. 2022 г.

Web of science:	WOS:000775802800001
Scopus:	2-s2.0-85126035120
РИНЦ:	48189500
OpenAlex:	W4214815440

БД	Цитирований
OpenAlex	4
Scopus	4
РИНЦ	3