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Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy Научная публикация

Журнал Applied Surface Science
ISSN: 1873-5584 , E-ISSN: 0169-4332
Вых. Данные Год: 2020, Том: 512, Номер статьи : 145735, Страниц : DOI: 10.1016/j.apsusc.2020.145735
Авторы Nikiforov Alexander 1,2 , Timofeev Vyacheslav 1 , Mashanov Vladimir 1 , Azarov Ivan 1,5 , Loshkarev Ivan 1 , Volodin Vladimir 1,5 , Gulyaev Dmitry 1 , Chetyrin Igor 3 , Korolkov Ilya 5,4
Организации
1 A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia
2 National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia
3 Boreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, Russia
4 Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentyev Avenue, Novosibirsk 630090, Russia
5 Novosibirsk State University, 1 Pirogov str., Novosibirsk 630090, Russia
Библиографическая ссылка: Nikiforov A. , Timofeev V. , Mashanov V. , Azarov I. , Loshkarev I. , Volodin V. , Gulyaev D. , Chetyrin I. , Korolkov I.
Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy
Applied Surface Science. 2020. V.512. 145735 . DOI: 10.1016/j.apsusc.2020.145735 WOS Scopus РИНЦ OpenAlex
Идентификаторы БД:
Web of science: WOS:000522731700099
Scopus: 2-s2.0-85079325375
РИНЦ: 43239835
OpenAlex: W3006599483
Цитирование в БД:
БД Цитирований
OpenAlex 57
Scopus 46
Web of science 52
РИНЦ 43
Альметрики: